| 摘要 |
PURPOSE: A semiconductor device fabricating method is provided to maximize delta doping effects by an ion-implantation with a lower energy level, and to improve current drive capacity of a device by removing impurities on the surface of a semiconductor substrate and increasing activation of ions for adjusting a threshold voltage with a laser annealing process. CONSTITUTION: A delta doping layer(23) is formed on the surface of a semiconductor substrate(21) using an ion-implantation with a lower energy level. The surface of the resultant structure is subjected to a laser annealing process to activate dopants implanted into the delta doping layer. An epitaxial silicon layer(25) is formed on the resultant structure using a selective epitaxial growing process. A gate oxide layer(26) and a gate electrode(27) are formed on the epitaxial silicon layer. Source/drain regions(29) are formed in the semiconductor substrate on either side of the gate electrode. |
