发明名称 Method for manufacturing thin semiconductor chips
摘要 In a process of manufacturing semiconductor chips (C), first, the reverse of a wafer (W), on the obverse of which many chips (C) are formed, is ground so as to shape the wafer (W) with a predetermined thickness. Then, the reverse of the wafer (W) is polished or etched so that the broken layer which is formed during the back grinding is removed. Next, grooves (G) are formed on the obverse of the wafer (W) in a predetermined depth along streets (S) formed between the chips (C). Finally, the wafer (W) is cleft along the grooves (G) so as to be divided into separate chips (C). By this process, the broken layer formed on the reverse of the wafer (W) is removed after the back grinding, then the wafer (W) is divided into separate chips (C) by use of the cleavage; therefore, chipping is effectively reduced. <IMAGE>
申请公布号 EP1091394(A3) 申请公布日期 2002.01.09
申请号 EP20000121597 申请日期 2000.10.02
申请人 TOKYO SEIMITSU CO.,LTD. 发明人 ISHIKAWA, TOSHIHIKO;KATAGIRI, YASUSHI
分类号 H01L21/304;H01L21/301;H01L21/78 主分类号 H01L21/304
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