发明名称 CHEMICAL VAPOR DEPOSITION SYSTEM
摘要 PURPOSE: A CVD system is provided to heighten the consistency of plasma, maintain high yield of products, consistently and continuously operable, and enable the film deposition having uniform film thickness and film quality over a large area in which the inside of a vacuum vessel is demarcated into a plasma generation space and a film deposition space. CONSTITUTION: A through holes(25) in the electrically conductive barrier rib part(14) are formed so that the hole diameter on the film deposition space(16) side is equivalent to or larger than the hole diameter on the plasma generation space(15) side. The through holes(25) are made of a structural body(30) independent from the electrically conductive barrier rib part(14).
申请公布号 KR20020001565(A) 申请公布日期 2002.01.09
申请号 KR20010035712 申请日期 2001.06.22
申请人 ANELVA CORPORATION 发明人 KO, SANG TAE
分类号 H01L21/205;C23C16/44;C23C16/452;C23C16/455;H01J37/32;(IPC1-7):H01L21/205 主分类号 H01L21/205
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