| 摘要 |
PURPOSE: A method for manufacturing a gate of a semiconductor device is provided to eliminate a direct tunneling phenomenon in a dynamic random access memory(DRAM) device having a design rule not greater than 0.13 micrometer, by evaporating a dual structure composed of nitride layers having a dielectric constant twice as high as a thermally-grown oxide layer. CONSTITUTION: The first nitride layer and the second nitride layer are sequentially formed on a semiconductor substrate to form a dual gate insulation layer. A polysilicon layer(13), a tungsten silicide layer(14) and a mask oxide layer(15) are sequentially formed on the resultant structure. The mask oxide layer, the tungsten silicide layer, the polysilicon layer, the second nitride layer and the first nitride layer are patterned to form a gate.
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