发明名称 |
ION GENERATOR USED IN PROCESS FOR MANUFACTURING SEMICONDUCTOR |
摘要 |
PURPOSE: An ion generator used in a process for manufacturing a semiconductor is provided to prevent sputtered molecules from being evaporated on a filament and to extend a lifetime of the filament, by preventing sputtering generated in a repeller. CONSTITUTION: An arc chamber(110) has the first and second side surfaces facing each other. The filament(120) penetrates the first side surface of the arc chamber. A cathode plate(140) fixes an end of the filament. A nonpolar repeller(150) penetrates the second side surface of the arc chamber. Thermal electrons or ions generated from the filament are prevented from directly colliding against the inner surface of the arc chamber.
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申请公布号 |
KR20020001266(A) |
申请公布日期 |
2002.01.09 |
申请号 |
KR20000035717 |
申请日期 |
2000.06.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
OK, GYEONG HA |
分类号 |
H01L21/265;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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地址 |
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