| 摘要 |
PURPOSE: To provide an impurity-concentration inspecting apparatus with which the impurity concentration of the whole of a semiconductor material as an object to be measured is measured and inspected simply, and with which the state of an impurity distribution is reproduced. CONSTITUTION: The impurity-concentration inspection apparatus for a semiconductor is constituted to be provided with a teraHertz pulse light source by which the semiconductor material is irradiated with the terahertz pulse light, a light-detecting means with which the transmitted pulsed light from the semiconductor material is detected, a terahertz-time-region measuring means which obtains a spectral transmission factor from the time-series waveform of the electric field strength of the transmitted pulsed light and a computing means, which calculates the impurity concentration of the semiconductor material on the basis of the spectral transmission factor. |
