| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for inspecting a mask by which defects in a fine pattern and a hole on a mask for exposure with charged particle rays are accurately detected and to provide an apparatus for inspecting a mask capable of shortening inspection time while ensuring high resolution. SOLUTION: In the method for inspecting a mask, a beltlike inspection region is set between an outside periphery defined by adding permissible accuracy to the outline of a mask design pattern and an inside periphery defined by subtracting the permissible accuracy from the outline and irradiated with charged particle rays, secondary electrons, reflected charged particles or transmitted charged particles are detected with a detector, the coordinates of the outline of a transfer mask pattern detected from the secondary electrons, reflected charged particles or transmitted charged particles are compared with the coordinates of the inspection region, and when the coordinates of the outline of the transfer mask pattern are not within the inspection region, the pattern is judged to be defective. An apparatus for mask inspection using the above inspection method is also presented.</p> |
