| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide-coated graphite material that has excellent thermal shock resistance and corrosion resistance, and, for example, is suitable for a material for a heat treatment in semiconductor production due to a SiC film separated in a gas phase by CVD method which is firmly coated on the surface of a graphite substrate; and its manufacturing method. SOLUTION: A Sin-coated graphite material comprises the graphite substrate, the surface of which is coated with SiC film by CVD method. In this case, the graphite substrate characteristically has an average pore size of 0.4-3 μm and a maximum pore size of 10-100 μm, the share of SiC in the surface layer of the graphite substrate at the depth of 150 μm from the surface of the graphite substrate is in a range of 15-50%, and an average crystal particle size of the SiC-membrane is in a range of 1-3 μm. Such a crystal is preferable as its intensity in diffractive peak by X-ray diffraction of the surface of SiC (III) of the surface of the SiC-membrane is 80% or more to the intensity of all the crystal surfaces (hkl). The manufacturing method comprises setting up the graphite substrate having an average pore size of 0.4-3 μm and a maximum pore size of 10-100 μm μm in a CVD reaction vessel and coating the substrate with SiC-membrane by CVD method at 1180-1300 deg.C at a concentration of 3-15 vol.% of a material gas. |
