摘要 |
PROBLEM TO BE SOLVED: To enhance performance and to solve technical problem in the microfabrication of a semiconductor device using electron beams or X-rays and to provide a negative type chemical amplification type resist composition for electron beams or X-rays which satisfies characteristics such as sensitivity, resolution, resist shape, development defects and appliability in the use of electron beams or X-rays. SOLUTION: The negative chemical amplification type resist composition contains a compound which generates an acid and/or a radical species when irradiated with electron beams or X-rays, an alkali-soluble resin, a crosslinker which causes crosslinking under the acid and a fluorine- and/or silicon-containing surfactant. |