发明名称 |
BONDED WAFER PRODUCING METHOD |
摘要 |
<p>In a method for producing a bonding wafer by the hydrogen ion delamination method comprising at least a step of bonding a base wafer and a bond wafer having a micro bubble layer formed by gas ion implantation and a step of delaminating them at the micro bubble layer as a border, a peripheral portion of a thin film formed on the base wafer is removed after the delamination step. Preferably, a region of 1-5 mm from the peripheral end of the base wafer is removed. In the production of a bonding wafer by the hydrogen ion delamination method, there can be provided a bonding wafer free from problems such as generation of particles from peripheral portion of the wafer and generation of cracks in the SOI layer. <IMAGE></p> |
申请公布号 |
EP1170801(A1) |
申请公布日期 |
2002.01.09 |
申请号 |
EP20000963000 |
申请日期 |
2000.09.29 |
申请人 |
SHIN-ETSU HANDOTAI COMPANY LIMITED |
发明人 |
NAKANO, MASATAKE;MITANI, KIYOSHI;TOMIZAWA, SHINICHI |
分类号 |
H01L21/762;(IPC1-7):H01L27/12 |
主分类号 |
H01L21/762 |
代理机构 |
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地址 |
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