| 摘要 |
PURPOSE: A positive photoresist composition containing a polymer, a photoactivated agent and a solubilization inhibitor is provided which can be used in lithography, in particular 193nm and 248nm lithography. The configuration, resolution and roughness of a resist pattern formed with the positive photoresist composition are excellent. CONSTITUTION: This positive photoresist composition comprises a polymer, a photoactivated agent and a solubilization inhibitor represented by the following formula(1) in which R1 and R2 are each independently hydroxyl, C1-8 hydroxyalkyl, or C3-8 hydroxycycloalkyl, R3, R4 and R5 are each independently H, C1-8 hydroxyalkyl, C1-6 carboxylic acid ester or C3-8 carboxylic acid ester and k is an integer of 0, 1, 2, 3, 4, 5 or 6. The photoresist composition is useful as a chemically amplified type resist when exposed to deep UV light from a KrF and ArF excimer laser.
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