发明名称 SYSTEM AND METHOD FOR FORMING DEPOSIT FILM
摘要 PROBLEM TO BE SOLVED: To provide a system and a method for forming a deposit film, by which a deposit film in which structural defects are suppressed and uniformity is improved can be formed over a large area. SOLUTION: In the deposit film forming system, a plurality of mounting parts for cylindrical substrates (A mm diameter) 105 are arranged at equal spaces on the same circumference so that the minimum distance d mm between the cylindrical substrates adjacent to each other satisfies A/3<=d and the configuration circle L mm of cylindrical substrates satisfies 2,000>=L, and further, a plurality of high frequency power introducing means 102A are arranged outside the configuration circles of the mounting parts. In the deposit film forming method, the cylindrical substrate 105 are arranged in the above-mentioned positions and the deposit film is formed by the RF plasma CVD method.
申请公布号 JP2002004049(A) 申请公布日期 2002.01.09
申请号 JP20000178839 申请日期 2000.06.14
申请人 CANON INC 发明人 HOSOI KAZUTO;SHIRASAGO TOSHIYASU;AKIYAMA KAZUYOSHI;OTSUKA TAKASHI;TAZAWA DAISUKE;MURAYAMA HITOSHI;AOIKE TATSUYUKI
分类号 G03G5/08;C23C16/24;C23C16/509;G03G5/082;H01L21/205;H01L21/31;(IPC1-7):C23C16/24 主分类号 G03G5/08
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