METHOD OF FORMING CAPACITOR FOR SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of fabricating a capacitor for a semiconductor device is provided to enable the high-density integration of a semiconductor device by forming an inner cylindrical type capacitor using an organic low-k layer. CONSTITUTION: A sacrificial insulating film(13) is deposited on a semiconductor substrate(11) having a lower insulating layer. An organic low-k layer(15) is formed on the sacrificial insulating film. A hard making layer(17) is formed on the organic low-k layer. A photo-resist pattern(19) is formed on the hard making layer by an exposure and development process using a storage electrode mask. The hard masking layer is etched and patterned using the photo-resist pattern as a mask, and the remaining portions of the photo-resist pattern are removed. The organic low-k layer is etched using the etched hard masking layer as a mask. The hard masking layer is removed, and a capping layer of a predetermined thickness is formed over the entire surface of the resultant structure. Capping layer spacers are formed on sidewalls of the organic low-k layer by anisotropically etching the capping layer. The sacrificial insulating film is etched using the capping layer spacers and the organic low-k layer as masks. The organic low-k layer and the capping layer spacers are sequentially removed.