| 发明名称 |
METHOD FOR FORMING FILM |
| 摘要 |
PURPOSE: To provide a method for forming a film having a dielectric constant of 2.7 or less while preventing surface roughening or cracking of a thick film. CONSTITUTION: A main gas component comprising siloxane and N2O is admixed with an inert gas or nitrogen gas (N2) for dilution and subjected to plasma reaction thus forming an insulation film 22 on a substrate 21.
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| 申请公布号 |
KR20020001532(A) |
申请公布日期 |
2002.01.09 |
| 申请号 |
KR20010033196 |
申请日期 |
2001.06.13 |
| 申请人 |
CANON SALES CO., INC.;SEMICONDUCTOR PROCESS LABORATORY CO., LTD. |
发明人 |
IKAKURA HIROSHI;KOTAKE YUICHIRO;MAEDA KAZUO;OHGAWARA SHOJI;OHIRA KOUICHI;SHIOYA YOSHIMI;SUZUKI TOMOMI;YAMAMOTO YOUICHI |
| 分类号 |
H01L21/205;C23C16/40;C23C16/511;H01L21/31;H01L21/312;H01L21/316;H01L21/768;H01L23/522;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/205 |
| 代理机构 |
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