| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and a system for film deposition, by which a film deposition material, such as copper, can be uniformly deposited on the surface of a wafer without causing agglomeration on the surface of the wafer. SOLUTION: The system has: a wafer pedestal part 18 for holding the wafer W while cooling it in a treatment chamber 16; a source gas passage 46 for allowing vapor-phase organometallic compound source gas to flow along the surface of the wafer W held by the wafer pedestal part 18; and an activation section 66 which is arranged in a manner to face the wafer W held by the wafer pedestal part 18 and where the organometallic compound source gas is subjected to radiational heating or activated by ultraviolet rays so that the organometallic compound source gas can be activated or its thermal decomposition can be accelerated in the vapor phase or on the outermost surface of the wafer.
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