METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to guarantee sufficient capacitance and to improve an electrical characteristic, by using metal as upper and lower electrodes and by using a double structure of a titanium-added tantalum oxide layer and an amorphous tantalum oxide layer as a dielectric layer. CONSTITUTION: A plug(13) and a diffusion barrier layer(14) are formed on a semiconductor substrate(11) in which a predetermined structure is formed. A Ru layer(16) is evaporated on the resultant structure, and is patterned to form a lower electrode. After a titanium-added tantalum oxide layer(17) is formed on the resultant structure, a heat treatment process is performed. An amorphous tantalum oxide layer(18) is formed on the titanium-added tantalum oxide layer. A metal layer is evaporated on the resultant structure to form an upper electrode(19).