METHOD FOR MANUFACTURING PASSIVATION LAYER

摘要

PURPOSE: A method for manufacturing a passivation layer is provided to reduce manufacturing cost and a thickness of positive resist, by using new positive resist capable of functioning as negative resist. CONSTITUTION: A surface treatment process using a hexamethyl disilazane(HMDS) solution is performed regarding a finished semiconductor device to improve adhesion of resist. Positive resist is applied on the surface-treated semiconductor device. A soft bake process is performed regarding the applied positive resist. An exposure process is performed regarding the soft-baked positive resist. A surface treatment process using an HMDS solution is repeated regarding the surface of the exposed positive resist. A heat treatment process is performed regarding the twice surface-treated positive resist for a predetermined interval of time. The positive resist is a compound of polyamic acid and diazo-naphtoquinone(DNQ).