| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to prevent diffusion between layers and to improve an interface characteristic, by forming different conditions under which a lower electrode and an upper electrode are manufactured. CONSTITUTION: An interlayer dielectric(2) and a doped silicon layer(3) are formed on a semiconductor substrate(1) having various elements for forming a semiconductor device. A diffusion barrier layer(4) is formed on the doped silicon layer. A lower electrode(5) is formed on the diffusion barrier layer. An after-treatment process is performed regarding the surface of the lower electrode to form a lower electrode oxide layer(5a). A dielectric layer and an upper electrode(7) are sequentially formed on the lower electrode oxide layer.
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