APPARATUS FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: An apparatus for fabricating a semiconductor device is provided to prevent a damage of a semiconductor substrate in a process for depositing a thin film on the semiconductor substrate by using a sputtering method. CONSTITUTION: A metal target(21) is formed at an inside of a lid of a reaction furnace. A shield(28) for preventing a metal deposited on the reaction furnace is installed on an edge portion of the metal target(21). A clamp ring(24) is formed at a lower portion of the metal target in order to fix a semiconductor substrate(23) in a metal layer deposition process. An injection hole and a gas valve(27) are formed at a left upper portion of the reaction furnace in order to inject argon gas. A table(22) is installed at a lower portion of the reaction furnace in order to load and heat the semiconductor substrate(23). The table(22) is lifted by a heater lift(25). An insertion hole(26) is formed at a left side of the reaction furnace in order to insert the semiconductor substrate(23). A cryo pump(31) is used for controlling a pressure of the reaction furnace.