METHOD FOR MANUFACTURING PHASE SHIFT MASK OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a phase shift mask of a semiconductor device is to precisely control a phase and transmissivity and to provide a vertical profile in a subsequent etch process, by forming a phase control layer for controlling the phase and transmissivity between a transparent substrate and a transparent layer wherein the phase control layer is sufficiently thick according to the phase and transmissivity. CONSTITUTION: A phase control layer, a transparent layer and a light blocking layer are sequentially formed on a transparent substrate(30). The thickness of the phase control layer and the transparent layer is controlled according to the phase and transmissivity. The first photoresist layer pattern exposing a transmission region predetermined to be a cell region of the substrate is formed on the light blocking layer. The light blocking layer and the transparent layer are etched to form a light blocking layer pattern and a transparent layer pattern(32b) by using the photoresist layer pattern as an etch mask. The first photoresist layer pattern is removed. The phase control layer is etched to form a phase control layer pattern(31b) exposing the transmission region by using the light blocking layer pattern as an etch mask. A transmissivity control region predetermined to be a peripheral circuit region in the substrate and the second photoresist layer pattern exposing the transmission region are formed on the light blocking layer pattern. The light blocking layer pattern is selectively etched, and the second photoresist layer pattern is eliminated.