| 摘要 |
PURPOSE: A method for manufacturing a capacitor is provided to improve reliability of the capacitor, by using a sacrificial dielectric layer to prevent oxygen inside a BST dielectric layer from being reduced. CONSTITUTION: An interlayer dielectric(12) in which a junction part is opened by the first contact hole is formed on a semiconductor substrate(11) having various elements for fabricating a semiconductor device. A contact plug(13) is formed inside the first contact hole. A diffusion barrier layer(14) is formed on the interlayer dielectric including the contact plug. A lower electrode(15) is formed on the diffusion barrier layer. A sacrificial dielectric layer(16) is formed on the lower electrode. A dielectric layer and an upper electrode(18) are sequentially formed on the sacrificial dielectric layer.
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