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发明名称
CMOS compatible bipolar transistor having a reduced collector-substrate capacitance, and method for making the same
摘要
申请公布号
EP0418422(B1)
申请公布日期
2002.01.09
申请号
EP19890117580
申请日期
1989.09.22
申请人
INFINEON TECHNOLOGIES AG
发明人
MEISTER, THOMAS, DR.;KLOSE, HELMUT, DR.;MEUL, HANS WILLI, DR.;WENDT, HERMANN, DR.
分类号
H01L29/73;H01L21/331;H01L21/8222;H01L21/8248;H01L21/8249;H01L27/06;H01L29/08;H01L29/732;(IPC1-7):H01L29/732;H01L21/824
主分类号
H01L29/73
代理机构
代理人
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