| 摘要 |
PURPOSE: A transistor is provided to prevent a body effect and a kink effect and to increase a short channel margin, by forming a buried oxide(BOX) layer in a substrate under a lightly-doped-drain(LDD) region. CONSTITUTION: A gate electrode(34) is formed on the substrate(31) by interposing a gate insulation layer. The second conductive impurity region of a low density is formed in the substrate at both sides of the gate electrode. An insulation layer sidewall is formed on the substrate at both sides of the gate electrode. The BOX layer(38) implanted with the second conductive impurity ions of a high density is formed in the substrate under the second conductive impurity region of a low density.
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