| 摘要 |
PURPOSE: To provide a semiconductor storage device constituted in such a structure that a load element is dispersed with and moreover, the stable operation of a memory cell and the high-speed operation of the memory cell are made compatible without making large the size of the memory cell. CONSTITUTION: This semiconductor storage device is a STRAM of a constitution that a load element is dispersed with. The film thickness of gate insulating films of a pair of MOS transistors 1, and 1' for drive consisting of N-MOS transistors in a memory cell is set thicker than that of gate insulating films of a pair of MOS transistors 2 and 2' for address selection consisting of P-MOS transistors in the memory cell.
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