| 摘要 |
PURPOSE: To prevent a short-circuit between gate electrodes in an STI technique, where gate insulating films and gate electrode material films are formed in order on a semiconductor substrate and after that, an element isolation insulating film is embedded in a groove provided on the main surface of the substrate. CONSTITUTION: This semiconductor device is characterized in that the device is provided with a semiconductor substrate 11 with a groove 13a provided on the main surface on one side of its main surfaces, an element isolation insulating fm 14, which is embedded in the groove part 13a and is made its upper part to protrude from the groove part 13a, gate insulating films 15 provided on one side of the main surfaces of the substrate 11 and transistors, which are respectively provided on the films 15 and are respectively provided with a gate electrode material film 16a constituting at least one part of each gate electrode 16, the gate electrode material films 16a come into contact directly with the side surfaces of the protruded part of the film 14 and the material films 16a have a reversely tapered cross section.
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