| 摘要 |
PURPOSE: To provide a semiconductor device which can suppress the parasitic capacitance low at a p-n junction and also changes due to applied voltages in the depletion layer width. CONSTITUTION: In an n-type silicon substrate, a high-concentration collector region 11 is formed and a low-concentration collector region 12 is formed on the entire surface. On this surface a base region 13 is formed and an emitter region 14 is formed on the surface of the base region 13. The thickness Dc of the low-concentration collector region 12 is set less than the width Wc of a depletion layer in the collector region 12 by forming a p-n junction with the collector region 12 and the base region 13 in a usual operation.
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