| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to guarantee desired capacitance, by forming and patterning a Ti-based material as a hard mask layer on an electrode material having a Pt thin film and by easily eliminating only the Ti-based material as the hard mask layer. CONSTITUTION: A lower insulation layer(33) having a storage electrode contact plug(37) is formed on a semiconductor substrate(31). The Pt thin film(39) as a conductive material coupled to the contact plug is formed on the resultant structure. The Ti-based material as the hard mask layer is stacked on the Pt thin film. The hard mask layer and the Pt thin film are patterned by a photolithography process using a storage electrode mask. The hard mask layer is eliminated.
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