| 摘要 |
PURPOSE: A method for manufacturing a fine pattern in a process for forming an organic lower anti-reflective layer(ARL) using a base treatment process is provided to prevent a profile of an undercut type caused by ununiformity of acid after an exposure process and a development process, by neutralizing and removing the acid remaining inside an organic ARL. CONSTITUTION: After the organic ARL(11) is applied on a semiconductor substrate(10) having a lower structure, a heat treatment process is performed. The substrate is processed by using a base treatment of a liquid phase like R4N¬+X- or MXn(R is an alkyl group the carbon of which is from 1 to 10. M is group 1 and group 2 alkali metal like Li, Na, K, Rb, Cs, Fr, Be, Mg, Ca, Sr, Ba or Ra. X represents F, Cl, Br, I or OH.). The remaining base of the liquid phase is eliminated.
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