METHOD FOR MANUFACTURING WAFER

摘要

PURPOSE: A method for manufacturing a wafer is provided to improve gate oxide integrity(GOI) of a gate oxide layer, by performing a heat treatment process regarding the wafer several times to form a non-defect region on the surface of the wafer. CONSTITUTION: An ingot is rapidly drawn out to shorten an interval of cooling time that a defect is generated inside the ingot so that the wafer(A) is manufactured. A rapid thermal annealing process is performed to process a fine defect on the surface of the wafer and near the surface of the wafer. A heat treatment process is performed regarding the wafer to form the non-defect region(10). After a sacrificial oxide layer is removed from the wafer, a subsequent heat treatment process is performed regarding the wafer.