METHOD FOR MANUFACTURING CONTACT PLUG USING SELECTIVE EPITAXIAL GROWTH

摘要

PURPOSE: A method for manufacturing a contact plug using a selective epitaxial growth is provided to increase a doping density of phosphorous in the contact plug, by using a boron phosphorous silicate glass(BPSG) layer as an interlayer dielectric wherein a relative quantity of tetra methyl phosphorous(TMB) in the BPSG layer is increased. CONSTITUTION: An interlayer dielectric is formed on a silicon substrate having several wordlines. The interlayer dielectric is made of a boron phosphorous silicate glass(BPSG) layer, and is etched to form a contact hole simultaneously exposing the predetermined number of wordlines and a silicon substrate region among the wordlines. The contact hole is filled with a conductive layer for a contact plug which is made of a single crystal silicon layer using a selective epitaxial growth. The conductive layer is polished.