发明名称 Method for forming a dielectric layer
摘要 A dielectric layer is formed by depositing a first dielectric layer above a semiconductor substrate including recessed regions, etching the first dielectric layer to remove any voids and to lower the aspect ratio of the recessed regions, and depositing a second dielectric layer on the first dielectric layer in the recessed regions. The method is particularly useful when the aspect ratios are high for recessed regions formed between patterns.
申请公布号 US6337282(B2) 申请公布日期 2002.01.08
申请号 US19990364053 申请日期 1999.07.30
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM JU-WAN;HWANG BYUNG-KEUN;KIM SUNG-JIN;LEE JUE-GOO;CHO CHANG-HYUN;KOH GWAN-HYEOB
分类号 H01L21/306;H01L21/31;H01L21/311;H01L21/316;H01L21/318;(IPC1-7):H01L21/311 主分类号 H01L21/306
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