发明名称 |
Method for forming a dielectric layer |
摘要 |
A dielectric layer is formed by depositing a first dielectric layer above a semiconductor substrate including recessed regions, etching the first dielectric layer to remove any voids and to lower the aspect ratio of the recessed regions, and depositing a second dielectric layer on the first dielectric layer in the recessed regions. The method is particularly useful when the aspect ratios are high for recessed regions formed between patterns.
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申请公布号 |
US6337282(B2) |
申请公布日期 |
2002.01.08 |
申请号 |
US19990364053 |
申请日期 |
1999.07.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM JU-WAN;HWANG BYUNG-KEUN;KIM SUNG-JIN;LEE JUE-GOO;CHO CHANG-HYUN;KOH GWAN-HYEOB |
分类号 |
H01L21/306;H01L21/31;H01L21/311;H01L21/316;H01L21/318;(IPC1-7):H01L21/311 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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