| 发明名称 |
Method and apparatus for integrating a metal nitride film in a semiconductor device |
| 摘要 |
The present invention describes a method of processing a substrate. According to the present invention a dielectric layer is formed on the substrate. The dielectric layer is then exposed in a first chamber to activated nitrogen atoms formed in a second chamber to form a nitrogen passivated dielectric layer. A metal nitride film is then formed on the nitrogen passivated dielectric layer.
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| 申请公布号 |
US6337289(B1) |
申请公布日期 |
2002.01.08 |
| 申请号 |
US19990405554 |
申请日期 |
1999.09.24 |
| 申请人 |
APPLIED MATERIALS. INC |
发明人 |
NARWANKAR PRAVIN;SAHIN TURGUT |
| 分类号 |
C23C16/34;C23C16/40;C23C16/46;H01L21/02;H01L21/28;H01L21/285;H01L21/31;H01L21/316;H01L21/768;H01L21/8242;H01L27/108;H01L29/423;H01L29/43;H01L29/49;H01L29/78;(IPC1-7):H01L21/469 |
主分类号 |
C23C16/34 |
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