发明名称 Process of forming a capacitor with multi-level interconnection technology
摘要 A capacitor having a multilevel interconnection technology and process thereof. Also disclosed is a process of electrically connecting a capacitor to an object, comprising the steps of first obtaining a capacitor. At least one solder ball is reflowed and secured onto the capacitor. The solder ball is in electrical communication with the capacitor through a contacting means. On this reflowed solder ball a cap of low melting point metal is secured. This can be done in a number of ways. The preferred way is to positioning a mask over the solder ball such that a portion of the solder ball is exposed through openings in the mask. At least one layer of a low melting point metal is deposited on the exposed surface of the solder ball through the mask, and thereby forming a capacitor with a multilevel interconnect cap. The low melting point metal can interact with the surface of the solder ball to form a cap of an eutectic or a liquefied portion. The cap portion can then be joined to the object.
申请公布号 US6336262(B1) 申请公布日期 2002.01.08
申请号 US19970846931 申请日期 1997.04.30
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 DALAL HORMAZDYAR M.;GAUDENZI GENE JOSEPH;GORRELL REBECCA Y.;TAKACS MARK A.;TRAVIS, JR. KENNETH J.
分类号 H01L21/56;H01L21/60;H01L23/498;H01L23/538;H05K1/18;H05K3/00;H05K3/34;(IPC1-7):H01G7/00 主分类号 H01L21/56
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