发明名称 Apparatus and method for generating addresses in a built-in self memory testing circuit
摘要 A memory address generating apparatus and method of a dynamic memory testing circuit for generating addresses for testing a dynamic memory which uses all the available addresses of the dynamic memory, which does not use the most significant addresses, and which does not use middle addresses among all the available addresses are provided. The address generator can obtain an up-counted address by up counting the addresses used by the dynamic memory. It can obtain a down-counted address by inverting the N-bit up-counted value, or by subtracting the N-bit up-counted value from the maximum address, or by combining the inverted MSB portion of the N-bit up-counted value with the LSB portion of the N-bit up-counted value subtracted from the LSB portion of the maximum address used in the dynamic memory. The down and up counted addresses are used as addresses for selectively testing the dynamic memory according to a selected testing method.
申请公布号 US6338154(B2) 申请公布日期 2002.01.08
申请号 US19980060242 申请日期 1998.04.14
申请人 SAMSUNG ELECTRONICS CO, LTD. 发明人 KIM HEON-CHEOL
分类号 G01R31/28;G11C29/12;G11C29/20;(IPC1-7):G01R31/28;G06F11/00 主分类号 G01R31/28
代理机构 代理人
主权项
地址