| 摘要 |
An ion implanter vacuum integrity check process and apparatus that enables a vacuum integrity check at a pressure substantially below the ion implantation process pressure, while storing an ion implantation process pressure set point for a subsequent ion implantation process. An ion implanter includes an end station chamber, a high vacuum system, a disk, a gas supply system and a controller for storing at least a vacuum integrity check pressure set point and an ion implantation process pressure set point. A disk inserted into the end station is accelerated to a predetermined rotational speed, while the high vacuum system is used to pump down the end station chamber. The end station chamber is, then, purged with an inert gas for a first predetermined time period, while maintaining the disk rotational speed and continuing to pump down the end station chamber. The pressure of the end station chamber is monitored, while the disk rotational speed and pumping of the chamber are maintained. If the vacuum integrity check pressure set point was reached in the end station chamber within a second predetermined time period, then the ion implanter is considered to have acceptable vacuum integrity. If not, then the process is ended and appropriate equipment maintenance action is taken for a possible leak. The apparatus includes a controller for storing at least a vacuum integrity check pressure set point, an ion implantation process pressure set point and an over-pressure set point.
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