发明名称 |
Process for manufacturing semiconductor devices |
摘要 |
Manufactured is a semiconductor device that has a substrate and a surface channel nMOS and a buried channel nMOS as well as a surface channel pMOS and a buried channel pMOS formed on the substrate. An n+ dopant is introduced prior to pattering a polycrystalline semiconductor layer that forms respective gate electrodes of the surface channel nMOS and the buried channel pMOS. A p+ dopant is also introduced prior to pattering a polycrystalline semiconductor layer that forms respective gate electrodes of the surface channel pMOS and the buried channel nMOS.
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申请公布号 |
US6337248(B1) |
申请公布日期 |
2002.01.08 |
申请号 |
US19990377047 |
申请日期 |
1999.08.19 |
申请人 |
NEC CORPORATION |
发明人 |
IMAI KIYOTAKA |
分类号 |
H01L27/08;H01L21/8238;H01L29/78;(IPC1-7):H01L21/336;H01L21/823 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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