发明名称 Method and circuit for minimizing the charging effect during manufacture of semiconductor devices
摘要 A protection device which is active during the manufacturing process of a semiconductor chip includes a protection transistor and an antenna. The protection transistor is connected between a metal line having devices to be protected electrically connected thereto and a ground supply, where the metal line is connected to devices to be protected. The antenna is formed of the same metal layer as the metal line and controls the operation of the protection transistor during the manufacturing process. The antenna is connected to a gate of the protection transistor. Optionally, there is a metal ring around the antenna which is connected to a drain of the protection transistor via the same metal layer as the metal line. During normal operation of the chip, the protection transistor is either active for other purposes or is turned off. Turning off is provided either by a line formed of a second metal layer that is connected between the antenna and ground, or by a reversed biased diode and a parallel capacitor that are connected between the gate of the protection transistor and ground. The present invention includes the method of manufacturing the protection device.
申请公布号 US6337502(B1) 申请公布日期 2002.01.08
申请号 US19990336666 申请日期 1999.06.18
申请人 SAIFUN SEMICINDUCTORS LTD. 发明人 EITAN BOAZ;BLOOM ILAN
分类号 H01L21/3205;H01L21/02;H01L21/3065;H01L21/311;H01L21/822;H01L21/8234;H01L21/8238;H01L21/8247;H01L23/52;H01L27/02;H01L27/04;H01L27/06;H01L27/088;H01L27/092;H01L27/10;H01L27/115;(IPC1-7):H01L23/62 主分类号 H01L21/3205
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