| 摘要 |
A method of manufacturing a semiconductor device in which a cobalt silicide layer is formed on a semiconductor substrate. In the method, the semiconductor substrate is prepared, and cobalt is deposited on the semiconductor substrate by sputtering while heating the semiconductor substrate at a temperature approximately equal to 200 degrees Celsius. Thereafter, cobalt is deposited on the semiconductor substrate by sputtering while heating the semiconductor substrate at a temperature between 300 degrees Celsius and 400 degrees Celsius without exposing the semiconductor substrate to the atmosphere. Preferably, the semiconductor substrate is thereafter rapid thermal annealed at a temperature equal to or higher than 500 degrees Celsius in nitrogen atmosphere for a predetermined time. Further, at least a part of cobalt portion or cobalt oxide portion on the semiconductor substrate is removed by wet etching.
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