发明名称 |
Semiconductor device having directionally balanced gates and manufacturing method |
摘要 |
A semiconductor device such as an IGBT having trench gates in a form of stripes, and manufacturing method, wherein concentration of stresses in only a single direction is relieved and the generation of a leakage current and crystal defects in the IGBT is prevented. In one embodiment, the inside of a terminal area of an IGBT is divided into a single gate pad area and plural element areas by a wiring area. The respective element areas are arranged in such a manner that the directions of trench gates formed in the respective element areas cross at right angles with respect to the directions of trench gates of respective adjacent element areas.
|
申请公布号 |
US6337498(B1) |
申请公布日期 |
2002.01.08 |
申请号 |
US19990249296 |
申请日期 |
1999.02.12 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HASEGAWA SHIGERU;MATSUDA HIDEO;BABA YOSHIRO;TSUCHITANI MASANOBU |
分类号 |
H01L29/78;H01L29/423;H01L29/739;H01L29/74;(IPC1-7):H01L29/94;H01L31/113 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|