| 摘要 |
There are provided a memory controller, a plurality of memory modules, and an external data bus common to the plurality of memory modules. The plurality of memory modules each include a plurality of memory chips, a plurality of internal data buses connected between a corresponding memory chip and an input/output terminal, a logic chip, and a plurality of switch transistors each connected between a corresponding internal data bus and a corresponding input/output terminal to turn on/off in response to a control signal from the logic chip. The plurality of switch transistors in a memory module selected by the memory controller are turned on, and the plurality of switch transistors in the memory modules other than the selected memory module are turned off. Thus, the capacity of the memory modules may be increased while maintaining high-speed data transfer.
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