发明名称 Method and apparatus for reducing bipolar current effects in silicon-on-insulator (SOI) dynamic logic circuits
摘要 A method and apparatus for reducing bipolar current effects in dynamic logic circuits that are fabricated using the SOI technology is disclosed. A dynamic logic circuit capable of reducing bipolar current effects includes a precharge transistor (or a discharge transistor), a pass transistor, a functional logic circuit block, and an inverter. Connected in series with the precharge transistor, the functional logic circuit block, which includes multiple transistors, receives signal inputs. The pass transistor, connected in parallel with the precharge transistor, receives an identical input as one of the many transistors within the functional logic circuit block. The inverter, connected to a node between the precharge transistor and the functional logic circuit block, provides an output for the dynamic logic circuit.
申请公布号 US6337584(B1) 申请公布日期 2002.01.08
申请号 US19990382760 申请日期 1999.08.25
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 DAVIES ANDREW DOUGLAS;STASIAK DANIEL LAWRENCE;ZIEGLER FREDERICK JACOB
分类号 H03K19/003;H03K19/096;(IPC1-7):H03K19/20 主分类号 H03K19/003
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