Charged-particle-beam microlithography methods exhibiting improved pattern-feature accuracy, and device manufacturing methods comprising same

摘要

Apparatus and methods are disclosed for achieving improved pattern linewidth of a pattern microlithographically transferred to a sensitive substrate using a charged particle beam such as an electron beam. Improved linewidth is achieved even if beam-edge resolution is not optimal. The poorest value of beam-edge resolution of the projection-optical system used to project the reticle pattern onto the substrate is 0.8 to 1.0 times the minimum linewidth of the pattern. A variation in threshold value is maintained at approximately ±1%, allowing linewidth precision to be maintained at a value that is well within a target value of ±10%, even if the beam is 0.9 to 1.0 times the minimum linewidth.