发明名称 Semiconductor device and method of manufacturing the same
摘要 Two contradictory problems of the reduction in the thickness of semiconductor chips or package parts including the semiconductor chips and the improvement in mechanical strength are solved. A semiconductor wafer where semiconductor elements are formed on a first surface thereof or semiconductor chips formed by dicing the semiconductor wafer are reduced in thickness by grinding the second surface opposite to the first surface, and grinding scratches formed by the grinding are removed to smooth the second surface. Since dicing scratches are formed on side surfaces of the semiconductor chips by dicing, the side surfaces are etched together with the second surface to remove the dicing scratches as well as the grinding scratches, thereby smoothing the second surface and the side surfaces.
申请公布号 US6337257(B1) 申请公布日期 2002.01.08
申请号 US20000499028 申请日期 2000.02.07
申请人 SHARP KABUSHIKI KAISHA 发明人 TOYOSAWA KENJI
分类号 H01L21/60;H01L21/301;H01L21/302;H01L21/304;H01L21/306;H01L21/3065;H01L21/78;H01L23/31;H01L29/06;(IPC1-7):H01L21/30;H01L21/46;H01L21/461;H01L21/495 主分类号 H01L21/60
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