| 摘要 |
<p>PROBLEM TO BE SOLVED: To enable to simplify a process by forming a source region and drain region which are crystallized by forming a mask on the channel forming region of an amorphous silicon film, and by having the amorphous silicon is irradiated with a laser beam film in a state with the mask being left on it. SOLUTION: A gate electrode 102 is patterned on a heat-resistant no-alkali glass substrate 101 by using a mask 1. Next, a silicon thin film such as amorphous material is formed, and patterning is performed by a mask 2 to form a semiconductor region 105. Then, a coated film which serves as a mask material with respect to a laser beam, e.g. a silicon nitride film containing much silicon is formed, and this film is patterned by a mask 3. In this state, first, impurities are selectively implanted into the semiconductor region by the method of ion implantation or ion doping to form an impurity region 108. After that, a silicon nitride film 106 and a photoresist 107 are removed, and a wiring 110 and pixel electrodes 111 of ITO are formed by masks 4 or 5.</p> |
