| 摘要 |
PURPOSE: A method for manufacturing a gate insulation layer of a semiconductor device is provided to improve a leakage current characteristic as the height of a barrier increases, by using a ZrO2-Al2O3 alloy layer as a gate insulation layer. CONSTITUTION: An alloy layer of ZrO2-Al2O3 is evaporated on a semiconductor substrate(1) to form a gate insulation layer(3). The ZrO2-Al2O3 alloy layer has a composition ratio of (ZrO2)1-x(Al2O3)x wherein x is from 0.05 to 0.55, having a thickness of 10-90 angstrom. The ZrO2-Al2O3 alloy layer is evaporated by either one of an atomic layer deposition(ALD) method or plasma chemical vapor deposition(CVD) method.
|
