| 摘要 |
PURPOSE: A method for manufacturing a metal interconnection of a semiconductor device is provided to form a copper interconnection without a seed layer, by inducing a spin-on process to simultaneously perform a hydrogen reduction annealing process and a forcible fill process. CONSTITUTION: A substrate(1) on which a damascene pattern on an interlayer dielectric(2) is formed, is prepared. A diffusion barrier layer(4) is formed on the resultant structure having the damascene pattern. A copper precursor is evaporated on the diffusion barrier layer by a spin-on process. The copper precursor is transformed to a porous copper layer by a baking process. A hydrogen reduction annealing process and a forcible fill process are performed regarding the porous copper layer to form a copper thin film having the completely-buried damascene pattern. The copper layer is polished to form a copper interconnection(6) by a chemical mechanical polishing method.
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