| 摘要 |
PURPOSE: A method for cleaning a semiconductor device is provided to form an electrode of a good shape, by using cleaning mixture liquid of NH4OH:HCOOH:HF:DI to prevent the electrode of a stacked structure of W/TiN/Ti from being damaged by tungsten, titanium nitride and titanium. CONSTITUTION: An electrode having a structure of W/TiN/Ti is patterned by an etch process, and is cleaned by mixture liquid of NH4OH:HCOOH:HF:DI. The composition ratio of the NH4OH:HCOOH:HF:DI mixture liquid is X:0.05:1:Y, wherein X is from 1 to 3 and Y is from 6 to 8.
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