METHOD FOR MANUFACTURING CONTACT PLUG OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a contact plug of a semiconductor device is provided to simplify a manufacturing process by replacing a dry etch-back process and a chemical mechanical polishing process, and to improve reliability by reducing recess of polysilicon as a contact plug material in an etching process. CONSTITUTION: Polysilicon filling a contact hole is formed on the entire surface. The polysilicon is etched to form a contact plug by using an advanced chemical etch(ACE) method. The polysilicon is evaporated by a thickness of 2000-10000 angstrom and within a temperature scope from a room temperature to 550 deg.C, containing phosphorous of 0.1-2.5 percent.