| 摘要 |
PURPOSE: A method for manufacturing an anti-fuse of a semiconductor device is provided to simplify a manufacturing process and minimize an occupying area by performing only a process for forming an impurity region and a metal layer on a semiconductor substrate, and to improve a current driving capacity and reliability by performing a repair process by latch-up. CONSTITUTION: An n-well(32) and a p-well(33) are formed in a semiconductor substrate(31). A plurality of isolation layers(34) are formed on the semiconductor substrate. N-type and p-type impurity ion implantation processes are performed to form a plurality of n-type impurity regions(35A,35B,35C) and a plurality of p-type impurity regions(36A,36B,36C) on the semiconductor substrate separated by the isolation layer. An insulation layer(37) is formed on the resultant structure, and a predetermined region of the insulation layer is etched to form a plurality of contact holes exposing the n-type impurity regions and the p-type impurity regions. The contact hole is filled with a conductive layer.
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