METHOD FOR MANUFACTURING METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE USING DUAL DAMASCENE METHOD

摘要

PURPOSE: A method for manufacturing a metal interconnection of a semiconductor device is provided to easily bury a conductive layer in a round opening, by breaking the lattice of an interlayer dielectric in an ion implantation process to form the opening. CONSTITUTION: The first interlayer dielectric(22) is selectively etched to form the first opening exposing the first junction region(21). An etch stop layer(23) and the second interlayer dielectric are stacked. The second interlayer dielectric(24) inside the first opening is selectively eliminated to expose the etch stop layer covering the first junction region on the lower surface of the first opening. An ion implantation mask defines the second opening broader than the first opening, connected to the first opening on the second interlayer dielectric. Ions are implanted into the exposed second interlayer dielectric and first junction region. The second junction region(25) deeper than the first junction region is formed inside the substrate while the lattice of the second interlayer dielectric is broken to damage the second interlayer dielectric. A cleaning process is performed to eliminate the ion implantation mask and the etch stop layer on the lower surface and in the inlet of the first opening. The damaged portion of the second interlayer dielectric is removed to form the second opening in the second interlayer dielectric, such that the second opening is connected to the first opening and the corner of the second opening is round. A conductive layer is buried in the first and second openings to form a metal interconnection.